SCOPUS 정보 검색 플랫폼

Superlattices and Microstructures

Volumn 43, Issue 2, 2008, Pages 81-85

MOCVD growth of InN using a GaN buffer

(8) Wang, L L a Wang, H a Chen, J a Sun, X a Zhu, J J a Jiang, D S a Yang, H a Liang, J W a

a INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

Electrical properties; InN; Metalorganic chemical vapour deposition; Surface; X ray diffraction

Indexed keywords

ELECTRIC PROPERTIES; EPILAYERS; GALLIUM NITRIDE; HALL MOBILITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR GROWTH; SURFACE MORPHOLOGY; X RAY DIFFRACTION;

DISLOCATION DENSITY; INDIUM NITRIDE; STRUCTURAL QUALITY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 38649140501 PISSN: 07496036 EISSN: 10963677 Source Type: Journal
DOI: 10.1016/j.spmi.2007.06.008 Document Type: Article

Times cited : (4)

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