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Volumn 228, Issue 1, 2001, Pages 27-30

A novel two-step method for improvement of MOVPE grown InN film on GaP(111)B substrate

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0035541043     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200111)228:1<27::AID-PSSB27>3.0.CO;2-S     Document Type: Article
Times cited : (6)

References (8)
  • 5
    • 0007056057 scopus 로고    scopus 로고
    • A. G. BHUIYAN, A. YAMAMOTO, A. HASHIMOTO, and R. ISHIGAMI, Proc. Internat. Workshop Nitride Semiconductors, Nagoya (Japan), September 24-27, 2000; IPAP Conf. Series 1, 343 (2000).
    • (2000) IPAP Conf. Series , vol.1 , pp. 343


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.