Growth and characterization of InN heteroepitaxial layers grown on Si substrates by ECR-assisted MBE

Physica Status Solidi (B) Basic Research

Volumn 228, Issue 1, 2001, Pages 21-26

  Yodo, T ^a   Ando, H ^a   Nosei, D ^a   Harada, Y ^a  

^a OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035541042     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200111)228:1<21::AID-PSSB21>3.0.CO;2-R     Document Type: Article

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