Growth of high-quality InN using low-temperature intermediate layers by RF-MBE

Journal of Crystal Growth

Volumn 237-239, Issue 1-4, 2002, Pages 1017-1021

  Saito, Y ^a   Yamaguchi, T ^a   Kanazawa, H ^a   Kano, K ^a   Araki, T ^a   Nanishi, Y ^a   Teraguchi, N ^b   Suzuki, A ^b  

^a RITSUMEIKAN UNIVERSITY   (Japan)

^b SHARP CORPORATION   (Japan)

Author keywords

A1. Surfaces; A2. Sigle crystal growth; A3. Molecular beam epitaxy; B1. Nitrides; B1. Sapphire

Indexed keywords

CARRIER CONCENTRATION; ELECTRON MOBILITY; FILM GROWTH; LOW TEMPERATURE OPERATIONS; MORPHOLOGY; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM COMPOUNDS; SINGLE CRYSTALS; SUBSTRATES;

INTERMEDIATE LAYERS;

MOLECULAR BEAM EPITAXY;

EID: 0036531185     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02119-4     Document Type: Article

References (5)