Silicon-carbon formed using cluster-carbon implant and laser-induced epitaxy for application as source/drain stressors in strained n-channel MOSFETs

Journal of the Electrochemical Society

Volumn 156, Issue 5, 2009, Pages

  Koh, Shao Ming ^a   Wang, Xincai ^b   Sekar, Karuppanan ^c   Krull, Wade ^c   Samudra, Ganesh S ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY   (Singapore)

^c Ceradyne Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; EXCIMER LASERS; FIELD EFFECT TRANSISTORS; GAS LASERS; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MASS SPECTROMETRY; MESFET DEVICES; PULSED LASER APPLICATIONS; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

ADVANCED TECHNOLOGIES; CARBON CONCENTRATIONS; COST-EFFECTIVE APPROACHES; DEVICE PERFORMANCE; EPITAXIAL CRYSTALLIZATIONS; HIGH RESOLUTION X-RAY DIFFRACTIONS; LASER ANNEAL; LASER-INDUCED; MOSFETS; N CHANNELS; PULSED EXCIMER LASERS; PULSED LASERS; SECONDARY-ION MASS SPECTROMETRIES; STRAIN ENGINEERINGS;

CARBON CLUSTERS;

EID: 63649103568     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3090178     Document Type: Article

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