Optimization of ClusterCarbon™ process parameters for strained Si lattice

Materials Science and Engineering: B

Volumn 154-155, Issue 1-3, 2008, Pages 122-125

  Sekar, Karuppanan ^a   Krull, Wade A ^a   Horsky, Thomas N ^a   Feudel, Thomas ^b   Krüger, Christian ^b   Flachowsky, Stefan ^b   Ostermay, Ina ^b  

^a Ceradyne Inc   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

ClusterCarbon; HRXRD; Ion implant; Molecular implants; SiC; Strain

Indexed keywords

AMORPHOUS CARBON; AMORPHOUS SILICON; ION IMPLANTATION;

CARBON SUBSTITUTION; CLUSTERCARBON; HIGHEST TEMPERATURE; HRXRD; IMPLANT ENERGY; ION IMPLANT; MOLECULAR IMPLANTS; OPTIMISATIONS; PROCESS PARAMETERS; SOLID PHASE EPITAXIAL REGROWTH;

SILICON CARBIDE;

EID: 56949096097     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.09.039     Document Type: Article

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