Evolution of Si0.982C0.018 pseudomorphic layer after excimer laser annealing

Journal of Applied Physics

Volumn 83, Issue 8, 1998, Pages 4064-4068

  Guedj, C ^a,b   Calvarin, G ^c   Piriou, B ^b  

^a NOKIA RESEARCH CENTER   (United States)

^b CNRS   (France)

^c LABORATOIRE STRUCTURES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 11644312655     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367161     Document Type: Article

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