Dopant activation in subamorphized silicon upon laser annealing

Applied Physics Letters

Volumn 89, Issue 8, 2006, Pages

  Ong, K K ^a   Pey, K L ^a   Lee, P S ^b   Wee, A T S ^c   Wang, X C ^d   Chong, Y F ^e  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY   (Singapore)

^e CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; CRYSTALLINE MATERIALS; DOPING (ADDITIVES); LASER APPLICATIONS;

DOPANT ACTIVATION; DOPANT DISTRIBUTION; LASER ANNEALING (LA);

AMORPHOUS SILICON;

EID: 33747834599     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2335950     Document Type: Article

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