Impact of fluorine ion implantation on narrow line effect of nickel silicide

Advanced Metallization Conference (AMC)

Volumn , Issue , 2006, Pages 199-204

  Yamaguchi, Tadashi ^a   Kashihara, Keiichiro ^a   Okudaira, Tomonori ^a   Kosugi, Takeshi ^a   Miyatake, Hiroshi ^a   Yoneda, Masahiro ^a  

^a Production and Technology Unit   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; FIELD EFFECT TRANSISTORS; FLUORINE; MOS DEVICES; NICKEL COMPOUNDS; X RAY DIFFRACTION; ION IMPLANTATION; MOSFET DEVICES; PHASE TRANSITIONS; X RAY DIFFRACTION ANALYSIS;

FLUORINE ION IMPLANTATION; NICKEL SILICIDE; SHEET RESISTANCE; P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (PMOSFET); SILICIDATION PROCESS;

ION IMPLANTATION; FLUORINE;

EID: 33644945357     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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