Anomalous hot-carrier induced degradation in very narrow channel nMOSFETs with STI structure

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1996, Pages 881-884

  Nishigohri, M ^a   Ishimaru, K ^a   Takahashi, M ^a   Unno, Y ^a   Okayama, Y ^a   Matsuoka, F ^a   Kinugawa, M ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEGRADATION; ELECTRIC CURRENTS; MOSFET DEVICES; SEMICONDUCTOR DEVICE STRUCTURES;

HOT CARRIER INDUCED DEGRADATION; HOT ELECTRON INJECTION; SHALLOW TRENCH ISOLATION;

HOT CARRIERS;

EID: 0030406637     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)