Characterization of local dielectric breakdown in ultrathin SiO2 films using scanning tunneling microscopy and spectroscopy

Journal of Applied Physics

Volumn 85, Issue 9, 1999, Pages 6704-6710

  Watanabe, Heiji ^a   Baba, Toshio ^a   Ichikawa, Masakazu ^b  

^a NEC CORPORATION   (Japan)

^b JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

DIELECTRIC BREAKDOWNS; NEGATIVE DIFFERENTIAL RESISTANCE (NDR); SCANNING TUNNELING SPECTROSCOPY (STS);

SEMICONDUCTING FILMS;

EID: 0032607880     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370182     Document Type: Article

References (34)

1. G. Timp et al., Tech. Dig. Int. Electron Devices Meet., 1997, p. 930.
2. See, for example, R. Moazzami and C. Hu, Tech. Dig. Int. Electron Devices Meet. 1992, p. 139; N. Yasuda, N. Patel, and A. Toriumi, Extended Abstracts in Solid State Devices and Materials Conference, Makuhari, Japan, 1993, p. 847; K. Okada and K. Taniguchi, Appl. Phys. Lett. 70, 351 (1997); A. I. Chou, K. Lai, K. Kumar, P. Chowdhury, and J. C. Lee, ibid. 70, 3407 (1997); K. Okada, S. Kawasaki, and Y. Hirofuji, Extended Abstracts in Solid State Devices and Materials Conferences, Yokohama, Japan, 1994, p. 565.
3. See, for example, R. Moazzami and C. Hu, Tech. Dig. Int. Electron Devices Meet. 1992, p. 139; N. Yasuda, N. Patel, and A. Toriumi, Extended Abstracts in Solid State Devices and Materials Conference, Makuhari, Japan, 1993, p. 847; K. Okada and K. Taniguchi, Appl. Phys. Lett. 70, 351 (1997); A. I. Chou, K. Lai, K. Kumar, P. Chowdhury, and J. C. Lee, ibid. 70, 3407 (1997); K. Okada, S. Kawasaki, and Y. Hirofuji, Extended Abstracts in Solid State Devices and Materials Conferences, Yokohama, Japan, 1994, p. 565.
4. See, for example, R. Moazzami and C. Hu, Tech. Dig. Int. Electron Devices Meet. 1992, p. 139; N. Yasuda, N. Patel, and A. Toriumi, Extended Abstracts in Solid State Devices and Materials Conference, Makuhari, Japan, 1993, p. 847; K. Okada and K. Taniguchi, Appl. Phys. Lett. 70, 351 (1997); A. I. Chou, K. Lai, K. Kumar, P. Chowdhury, and J. C. Lee, ibid. 70, 3407 (1997); K. Okada, S. Kawasaki, and Y. Hirofuji, Extended Abstracts in Solid State Devices and Materials Conferences, Yokohama, Japan, 1994, p. 565.
5. See, for example, R. Moazzami and C. Hu, Tech. Dig. Int. Electron Devices Meet. 1992, p. 139; N. Yasuda, N. Patel, and A. Toriumi, Extended Abstracts in Solid State Devices and Materials Conference, Makuhari, Japan, 1993, p. 847; K. Okada and K. Taniguchi, Appl. Phys. Lett. 70, 351 (1997); A. I. Chou, K. Lai, K. Kumar, P. Chowdhury, and J. C. Lee, ibid. 70, 3407 (1997); K. Okada, S. Kawasaki, and Y. Hirofuji, Extended Abstracts in Solid State Devices and Materials Conferences, Yokohama, Japan, 1994, p. 565.
6. See, for example, R. Moazzami and C. Hu, Tech. Dig. Int. Electron Devices Meet. 1992, p. 139; N. Yasuda, N. Patel, and A. Toriumi, Extended Abstracts in Solid State Devices and Materials Conference, Makuhari, Japan, 1993, p. 847; K. Okada and K. Taniguchi, Appl. Phys. Lett. 70, 351 (1997); A. I. Chou, K. Lai, K. Kumar, P. Chowdhury, and J. C. Lee, ibid. 70, 3407 (1997); K. Okada, S. Kawasaki, and Y. Hirofuji, Extended Abstracts in Solid State Devices and Materials Conferences, Yokohama, Japan, 1994, p. 565.
7. R. Sugino, T. Nakanishi, K. Takasaki, and T. Ito, Extended Abstracts in Solid State Devices and Materials Conferences, Osaka, Japan, 1995, p. 920.
8. K. F. Schuegraf and C. Hu, J. Appl. Phys. 76, 3695 (1994).
9. Y. Homma, M. Suzuki, and N. Yabumoto, J. Vac. Sci. Technol. A 10, 2055 (1992).
10. M. Ohashi and T. Hattori, Jpn. J. Appl. Phys., Part 2 36, L397 (1997).
11. V. Tsai, X.-S. Wang, and E. D. Williams, Appl. Phys. Lett. 71, 1495 (1997).
12. See, for example, A. Ando, K. Sakamoto, K. Miki, K. Matsumoto, and T. Sakamoto, Extended Abstracts in Solid State Devices and Materials Conferences, Hamamatsu, Japan, 1997, p. 540.
13. H. J. Wen and R. Ludeke, J. Vac. Sci. Technol. B 15, 1080 (1997).
14. B. Kaczer, Z. Meng, and J. P. Plez, Phys. Rev. Lett. 77, 91 (1996).
15. Ph. Avouris, I.-W. Lyo, and F. Bozso, J. Vac. Sci. Technol. B 9, 424 (1991).
16. K. E. Johnson and T. Engel, Phys. Rev. Lett. 69, 339 (1992).
17. Y. Ono, M. Tabe, and H. Kageshima, Phys. Rev. B 48, 14291 (1993).
18. K. Fujita, H. Watanabe, and M. Ichikawa, Appl. Phys. Lett. 70, 2807 (1997).
19. K. Fujita, H. Watanabe, and M. Ichikawa, J. Appl. Phys. 83, 3638 (1998).
20. H. Watanabe, K. Fujita, and M. Ichikawa, Appl. Phys. Lett. 72, 1987 (1998).
21. H. Watanabe and M. Ichikawa, Rev. Sci. Instrum. 67, 4185 (1996). We installed a UHV-STM apparatus in our multifunctional surface analysis system.
22. H. Watanabe, K. Fujita, and M. Ichikawa, Surf. Sci. 385, L953 (1997).
23. J. M. Gibson and M. Y. Lanzerotti, Nature (London) 340, 128 (1989).
24. K. Ohisi and T. Hattori, Jpn. J. Appl. Phys., Part 2 33, L675 (1994).
25. H. Watanabe, K. Kato, T. Uda, K. Fujita, M. Ichikawa, T. Kawamura, and K. Terakura, Phys. Rev. Lett. 80, 345 (1998).
26. K. Sakakibara, N. Ajika, M. Hatanaka, H. Miyoshi, and A. Yasuoka, IEEE Trans. Electron Devices 40, 986 (1997).
27. A. Yokozawa, A. Oshiyama, Y. Miyamoto, and S. Kumashiro, Tech. Dig. Int. Electron Devices Meet. 1997, p. 703.
28. A. N. Korotkov, D. V. Averin, K. K. Likharev, and S. A. Vasenko, in Single-Electron Tunneling and Mesoscopic Devices, edited by H. Koch and H. Lubbig (Springer, Berlin, 1992).
29. K. Yano, T. Ishii, T. Hashimoto, T. Kobayashi, F. Murai, and K. Seki, Appl. Phys. Lett. 67, 828 (1995).
30. See, for example, K. S. Ralls, W. J. Skocpol, L. D. Jackel, R. E. Howard, L. A. Fetter, R. W. Epworth, and D. M. Tennant, Phys. Rev. Lett. 52, 228 (1984); M. J. Kirton and M. J. Uren, Appl. Phys. Lett. 48, 1270 (1986).
31. See, for example, K. S. Ralls, W. J. Skocpol, L. D. Jackel, R. E. Howard, L. A. Fetter, R. W. Epworth, and D. M. Tennant, Phys. Rev. Lett. 52, 228 (1984); M. J. Kirton and M. J. Uren, Appl. Phys. Lett. 48, 1270 (1986).
32. See, for example, T. Tanamoto and A. Toriumi, Jpn. J. Appl. Phys., Part 1 36, 1439 (1997).
33. P. O. Hahn and M. Henzler, J. Vac. Sci. Technol. A 2, 574 (1984).
34. S. M. Goodnick, D. K. Ferry, C. W. Wilmsen, Z. Liliental, D. Fathy, and O. L. Krivanek, Phys. Rev. B 32, 8171 (1985).