Nickel vs. cobalt silicide integration for sub-50nm CMOS

European Solid-State Device Research Conference

Volumn , Issue , 2003, Pages 215-218

  Froment, B ^a   Muller, M ^c   Brut, H ^a   Pantel, R ^a   Carron, V ^b   Achard, H ^b   Halimaoui, A ^a   Boeuf, F ^a   Wacquant, F ^a   Regnier, C ^a   Ceccarelli, D ^a   Palla, R ^a   Beverina, A ^a   De Jonghe, V ^c   Spinelli, P ^a   Leborgne, O ^a   Bard, K ^a   Lis, S ^a   Tirard, V ^a   Morin, P ^a   Trentesaux, F ^a   Gravey, V ^d   Mandrekar, T ^d   Rabilloud, D ^d   Van, S ^d   Olson, E ^d   Diedrick, J ^d   more..

^a STMICROELECTRONICS   (France)

^b LETI   (France)

^c NXP SEMICONDUCTORS   (Netherlands)

^d Applied Materials ^*  (France)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT SILICIDE;

EID: 84907710117     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2003.1256852     Document Type: Conference Paper

References (5)

1. Q. Xiang, Abst. of 201th Elect. Soc. Meet., 2002-1, 583 (2002)
2. Y. Hu and S.P. Tay, J. Vacuum Set Technol. (B), 19(2), 376 (2001)
3. B. Froment, ECS, 2003.
4. T. Murakami, ECS 2003
5. F. La Via et al, IEEE TED, vol.44, No.4, pp.526-533.