High performance transistors with state-of-the-art CMOS technologies

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 427-430

  Song, Seungheon ^a   Kim, W S ^a   Ha, J M ^a   Lee, G G ^a   Ku, J H ^a   Kim, H S ^a   Kim, C S ^a   Choi, C J ^a   Choe, T H ^a   Yoo, J Y ^a   Song, W S ^a   Park, J W ^a   Jeong, S H ^a   Baek, D H ^a   Fujihara, K ^a   et al , ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; GATES (TRANSISTOR); LEAKAGE CURRENTS; LSI CIRCUITS; SEMICONDUCTOR DEVICE MANUFACTURE; THRESHOLD VOLTAGE; TRANSCONDUCTANCE; TRANSMISSION ELECTRON MICROSCOPY;

CAPACITANCE VOLTAGE CHARACTERISTICS; CHANNEL EPITAXY; CMOS TECHNOLOGY; ELEVATED SOURCE DRAIN TECHNOLOGY; GATE DELAY; NICKEL SALICIDE TECHNOLOGY; SATURATION CURRENT;

MOSFET DEVICES;

EID: 19244370159     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)