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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2142-2146

Novel nitrogen doped Ni self-alingned silicide process for nanoscale complementary metal oxide semiconductor technology

(11) Oh, Soon Young a Yun, Jang Gn a Huang, Bin Feng a Kim, Yong Jin a Ji, Hee Hwan a Kim, Ui Sik b Cha, Han Seob b Heo, Sang Bum b Lee, Jeong Gun b Wang, Jin Suk a Lee, Hi Deok a

a Chungnam National University (South Korea)

b MagnaChip Semiconductor Ltd (South Korea)

Author keywords

1 nitrogen doped nickel; Cmosfets; Nickel suicide; Post silicidation annealing; Thermal stability

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; DOPING (ADDITIVES); ELECTRIC RESISTANCE; LEAKAGE CURRENTS; MOS DEVICES; NITROGEN; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

1%-NITROGEN DOPED NICKEL; CMOSFET; NICKEL SILICIDE; POST-SILICIDATION ANNEALING;

NICKEL;

EID: 21244477129 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.44.2142 Document Type: Conference Paper

Times cited : (6)

References (10)

1
- 33847032747
- Q. Xiang: Abst. 201st Electrochem. Soc. Meeting (2002) p. 583.
- (2002) Abst. 201st Electrochem. Soc. Meeting , pp. 583
- Xiang, Q.¹

2
- 0141528119
- Y. Hu and S. P. Tay: J. Vac. Sci. & Technol. B 19 (2001) 376.
- (2001) J. Vac. Sci. & Technol. B , vol.19 , pp. 376
- Hu, Y.¹ Tay, S.P.²

3
- 0142055828
- C. Lavoie, F. M. d'Heurle, C. Detavemier and C. Cabrai Jr.: Microelectron. Eng. 70 (2003) 144.
- (2003) Microelectron. Eng. , vol.70 , pp. 144
- Lavoie, C.¹ D'Heurle, F.M.² Detavemier, C.³ Cabrai Jr., C.⁴

4
- 0141538304
- M. Y. Wang, C. W. Chang, C. M. Wu, C. T. Lin, C. H. Hsieh, Winston S. Shue and M. S. Liang: Symp. VLSI Tech. Dig. (2003) p. 157.
- (2003) Symp. VLSI Tech. Dig. , pp. 157
- Wang, M.Y.¹ Chang, C.W.² Wu, C.M.³ Lin, C.T.⁴ Hsieh, C.H.⁵ Shue, W.S.⁶ Liang, M.S.⁷

5
- 0141761557
- M. C. Sun, M. J. Kim, J.-H. Ku, K. J. Roh, C. S. Kim, S. P. Youn, S.-W. Jung, S. Choi, N. I. Lee, H.-K. Kang and K. P. Suh: Symp. VLSI Tech. Dig. (2003) p. 81.
- (2003) Symp. VLSI Tech. Dig. , pp. 81
- Sun, M.C.¹ Kim, M.J.² Ku, J.-H.³ Roh, K.J.⁴ Kim, C.S.⁵ Youn, S.P.⁶ Jung, S.-W.⁷ Choi, S.⁸ Lee, N.I.⁹ Kang, H.-K.¹⁰ Suh, K.P.¹¹

6
- 0036132997
- P. S. Lee, D. Mangelinck, K. L. Pey, J. Ding, D. Z. Chi, T. Osipowicz, J. Y. Dai and A. See: Microelectron. Eng. 60 (2002) 171.
- (2002) Microelectron. Eng. , vol.60 , pp. 171
- Lee, P.S.¹ Mangelinck, D.² Pey, K.L.³ Ding, J.⁴ Chi, D.Z.⁵ Osipowicz, T.⁶ Dai, J.Y.⁷ See, A.⁸

7
- 0036607310
- P. S. Lee, K. L. Pey, D. Mangelinck, J. Ding, D. Z. Chi, J. Y. Dai and L. Chan: J. Electrochem. Soc. 149 (2002) G331.
- (2002) J. Electrochem. Soc. , vol.149
- Lee, P.S.¹ Pey, K.L.² Mangelinck, D.³ Ding, J.⁴ Chi, D.Z.⁵ Dai, J.Y.⁶ Chan, L.⁷

8
- 0030107880
- C. T. Huang: IEEE Electron Device Lett. 17 (1996) 88.
- (1996) IEEE Electron Device Lett. , vol.17 , pp. 88
- Huang, C.T.¹

9
- 0029490218
- T. Ohguro, S. Nakamura, E. Morifuji, M. Ono, T. Yoshitomi, M. Saito, H. S. Momose and H. Iwai: IEEE Int. Electron Device Meet. Tech. Dig. (1995) p. 453.
- (1995) IEEE Int. Electron Device Meet. Tech. Dig. , pp. 453
- Ohguro, T.¹ Nakamura, S.² Morifuji, E.³ Ono, M.⁴ Yoshitomi, T.⁵ Saito, M.⁶ Momose, H.S.⁷ Iwai, H.⁸

10
- 0036544436
- T. S. Chao and L. Y. Lee: Jpn. J. Appl. Phys. 41 (2002) L381.
- (2002) Jpn. J. Appl. Phys. , vol.41
- Chao, T.S.¹ Lee, L.Y.²

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