Damage accumulation in Si during high-dose self-ion implantation

Journal of Applied Physics

Volumn 96, Issue 3, 2004, Pages 1328-1335

  Zhong, Y ^a   Bailat, C ^a   Averback, R S ^a   Ghose, S K ^b   Robinson, I K ^b  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DAMAGE ACCUMULATION; HIGH-RESOLUTION X-RAY DIFFRACTION SCANS; ISOCHRONAL ANNEALING; X-RAY SCATTERING;

AMORPHIZATION; ANNEALING; DISSOCIATION; ION IMPLANTATION; IRRADIATION; KINEMATICS; SPECTROSCOPIC ANALYSIS; STRAIN; TRANSMISSION ELECTRON MICROSCOPY; X RAY ANALYSIS; X RAY DIFFRACTION;

SILICON;

EID: 4043161891     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1763242     Document Type: Article

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