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Volumn , Issue , 2006, Pages 176-179

Improvement of thermal stability of nickel silicide using N2 ion implantation prior to nickel film deposition

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ION IMPLANTATION; THERMODYNAMIC STABILITY;

EID: 34250159820     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (14)

References (15)
  • 5
    • 24044493967 scopus 로고    scopus 로고
    • D. Deduytsche et al., J. Appl. Phys., Vol.98, No.3 (2005) 033526
    • (2005) J. Appl. Phys , vol.98 , Issue.3 , pp. 033526
    • Deduytsche, D.1
  • 6
    • 0345222451 scopus 로고    scopus 로고
    • A. S. W. Wong et al., Appl. Phys. Lett., Vol.81, No.27 (2002) p.5138
    • (2002) Appl. Phys. Lett , vol.81 , Issue.27 , pp. 5138
    • Wong, A.S.W.1
  • 14
  • 15
    • 34250178341 scopus 로고    scopus 로고
    • Tokyo, Japan
    • S. Y. Oh et al., SSDM Ext. Abst. (Tokyo, Japan, 2004) p.442
    • (2004) SSDM Ext. Abst , pp. 442
    • Oh, S.Y.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.