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Volumn 79, Issue 12, 1996, Pages 9017-9021

Characterization of defects in self-ion implanted Si using positron annihilation spectroscopy and Rutherford backscattering spectroscopy

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001003327     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362634     Document Type: Article
Times cited : (33)

References (33)
  • 24
    • 0000542038 scopus 로고
    • Radiation Effects in Semiconductors, Institute of Physics, London
    • L. C. Kimmerling, in Radiation Effects in Semiconductors, Inst. Phys. Conf. Ser. No. 31 (Institute of Physics, London, 1977), p. 221.
    • (1977) Inst. Phys. Conf. Ser. No. 31 , pp. 221
    • Kimmerling, L.C.1
  • 33
    • 5344225886 scopus 로고
    • unpublished
    • M. Fujinami (unpublished, 1995).
    • (1995)
    • Fujinami, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.