Self-consistent calculations for n-type hexagonal SiC inversion layers

Journal of Applied Physics

Volumn 95, Issue 8, 2004, Pages 4223-4234

  Pennington, G ^a   Goldsman, N ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CHANNEL MOBILITY; CONDUCTION BANDS; DRIFT VELOCITY;

ANISOTROPY; BAND STRUCTURE; CRYSTAL STRUCTURE; ELECTRIC FIELDS; ELECTRON MOBILITY; MOSFET DEVICES; SILICON CARBIDE;

SEMICONDUCTING SILICON;

EID: 2342630057     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1687977     Document Type: Article

References (28)

1. P. G. Neudeck, J. Electron. Mater. 24, 283 (1995).
2. J. W. Palmour, R. F. Davis, H. S. Kong, S. F. Corcoran, and D. F. Griffis, J. Electrochem. Soc. 136, 502 (1989).
3. N. S. Saks and A. K. Agarwal, Appl. Phys. Lett. 77, 3281 (2000).
4. L. Lipkin, M. Das, and J. Palmour, Mater. Res. Soc. Symp. Proc. 640, H3.1.1 (2001).
5. H. Matsunami, T. Kimoto, and H. Yano, Mater. Res. Soc. Symp. Proc. 640, H3.4.1 (2001).
6. S. K. Powell, N. Goldsman, J. M. McGarrity, J. Bernstein, C. J. Scozzie, and A. Lelis, J. Appl. Phys. 92, 4053 (2002).
7. J. N. Shenoy, M. K. Das, J. A. Cooper, M. R. Melloch, and J. W. Palmour, J. Appl. Phys. 79, 3042 (1996).
8. H. Yano, T. Hirao, T. Kimoto, and H. Matsunami, Appl. Phys. Lett. 81, 4772 (2002).
9. H. Yano, T. Kimoto, and H. Matsunami, Appl. Phys. Lett. 81, 301 (2002).
10. C. Raynaud, J. L. Autran, B. Balland, G. Guillot, C. Jaussaud, and T. Billion, J. Appl. Phys. 76, 993 (1994).
11. A. K. Agarwal, J. B. Casady, L. B. Rowland, W. F. Valek, M. H. White, and C. D. Brandt, IEEE Electron Device Lett. 18, 586 (1997).
12. M. Bhatnagar and B. B. Baliga, IEEE Trans. Electron Devices 40, 645 (1993).
13. T. Ando, A. B. Fowler, and F. Stern, Rev. Mod. Phys. 54, 437 (1982).
14. F. Stern and W. E. Howard, Phys. Rev. 163, 816 (1967).
15. F. Stern, Phys. Rev. B 5, 4891 (1972).
16. C. Moglestue, J. Appl. Phys. 59, 3175 (1986).
17. T. Ouisse, J. Appl. Phys. 75, 2092 (1993).
18. G. Pennington and N. Goldsman, Phys. Rev. B 64, 045104 (2001).
19. N. T. Son et al., Appl. Phys. Lett. 66, 1074 (1995).
20. W. R. L. Lambrecht and B. Segall, Phys. Rev. B 52, R2249 (1995).
21. L. Patrick, Phys. Rev. B 5, 2198 (1972).
22. W. J. Choyke, D. R. Hamilton, and L. Patrick, Phys. Rev. A133, 1163 (1964).
23. H. J. Im, B. Kaczer, J. P. Pelz, S. Limpijumnong, W. R. L. Lambrecht, and W. J. Choyke, J. Electron. Mater. 27, 345 (1998).
24. I. Shalish, I. B. Altfeder, and V. Narayanamurti, Phys. Rev. B 65, 073104 (2002).
25. B. Wenzien, P. Kaeckell, F. Bechstedt, and G. Cappellini, Phys. Rev. B 52, 10897 (1995).
26. C. Persson and U. Lindefelt, Phys. Rev. B 54, 10257 (1996).
27. T. Ando, Phys. Rev. B 13, 3468 (1976).
28. Yu. Goldberg, M. Levinshtein, and S. Rumyantsev, Properties of Advanced Semiconductor Materials, edited by M. Levinshtein, S. Rumyantsev, and M. Shur (Wiley, New York, 2001), p. 93.