Stable operation of high mobility 4H-SiC MOSFETs at elevated temperatures

Electronics Letters

Volumn 41, Issue 14, 2005, Pages 825-826

  Olafsson H O ^a   Gudjonsson G ^a   Allerstam, F ^a   Sveinbjornsson E O ^a   Rodle T ^b   Jos, R ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; NITROGEN; OXIDATION; PHONONS; SILICON CARBIDE; SUBSTRATES; THERMAL EFFECTS;

CONDUCTION BAND; DRAIN LAYERS; GATE OXIDATION; PHONON SCATTERING;

MOSFET DEVICES;

EID: 23044504372     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20051833     Document Type: Article

References (6)

1. Peters, D., Schörner, R., Friedrichs, P., and Stephani, D.: '4H-SiC power MOSFET blocking 1200 V with a gate technology compatible with industrial Applications', Mater. Sci. Forum, 2003, 433-436, pp. 769-772
2. 2/4H-SiC interface', IEEE Trans. Electron Devices, 2003, 50, pp. 1582-1588
3. Takagi, S., Toriumi, A., Iwase, M., and Tango, H.: 'On the universality of inversion layer mobility in Si MOSFETs: Part I - Effects of substrate impurity concentration', IEEE Trans. Electron. Devices, 1994, 41, pp. 2357-2362
4. Alok, D., Arnold, E., Egloff, R., and Mukherjee, S.: 'Method for improving the inversion mobility in a SiC MOSFET. United States Patent and Trademark Office, Patent No. 6,559,068,2003
5. Ólafsson, H.Ö., Gudjonsson, G., Nilsson, P.-Å., Sveinbjörnsson, E.Ö., Zirath, H., Rödle, T., and Jos, R.: 'High field effect mobility in Si face 4H-SiC MOSFET transistors', Electron. Lett., 2004, 40, pp. 508-510
6. Powell, S.K., Goldsman, N., McGarrity, J.M., Bernstein, J., Scozzie, C., and Lelis, A.: 'Physics-based numerical simulation and characterization of 6H-silicon-carbide metal-oxide-semiconductor field effect transistors', J. Appl. Phys., 2002, 92, pp. 4053-4061