Optimization of 4H-SiC MOS properties with cesium implantation

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 751-754

  Wang, Y ^a   Khan, T ^a   Chow, T P ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

4H SiC MOS; Cesium implantation; Interface state density

Indexed keywords

CESIUM; INTERFACE STATES; SILICA;

4H-SIC MOS; CESIUM IMPLANTATION; DEPOSITED OXIDES; EFFECTIVE OXIDE CHARGE; ELECTRICAL CHARACTERISTIC; FLAT-BAND VOLTAGE SHIFT; INTERFACE STATE DENSITY; OPTIMISATIONS; OXIDE CHARGE DENSITY; PROPERTY;

SILICON CARBIDE;

EID: 59849108699     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.600-603.751     Document Type: Conference Paper

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