Formation of deep traps at the 4H-SiC/SiO2 interface when utilizing sodium enhanced oxidation

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 517-520

  Allerstam, F ^a   Gudjonsson G ^a   Sveinbjornsson E O ^a   Rodle T ^b   Jos, R ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Deep interface trap; Interface states; Sodium

Indexed keywords

ACTIVATION ENERGY; SILICON CARBIDE; SODIUM;

DEEP TRAPS; INTERFACE TRAPS; SIC/SIO2-INTERFACES; SODIUM ENHANCED OXIDATIONS; TRAP CONCENTRATION;

INTERFACE STATES;

EID: 38449094661     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.517     Document Type: Conference Paper

References (3)

1. H.O. Olafsson: Detection and removal of traps at the SiO: SiC interface. PhD thesis. Chalmers University of Technology. 2004.
2. E.O. Sveinbjomsson. F. Allerstam. H.O. Olafsson. G. Gudjonsson. D. Dochev. T. Rodle and R. Jos: These Proceedings.
3. T.E. Rudenko. I.N. Osiyuk. LP. Tyagulski. H.O Olafsson. and E.O. Sveinbjomsson: Solid State Electr. Vol. 49 (2005). p.545