A novel thermally-stable zirconium amidinate ALD precursor for ZrO2 thin films

Microelectronic Engineering

Volumn 86, Issue 3, 2009, Pages 272-276

  Lee, B ^a   Choi, K J ^a   Hande, A ^a   Kim, M J ^a   Wallace, R M ^a   Kim, J ^a   Senzaki, Y ^b   Shenai, D ^b   Li, H ^b   Rousseau, M ^b   Suydam, J ^b  

^a The University of Texas at Dallas   (United States)

^b ROHM AND HAAS COMPANY   (United States)

Author keywords

Atomic layer deposition; Zr amidinate (Zr AMD) precursor; ZrO2 thin film

Indexed keywords

ATOMIC LAYER DEPOSITION; ATOMIC PHYSICS; ATOMS; ELECTRIC PROPERTIES; ELECTRODEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SOLIDS; SUBSTRATES; THIN FILM DEVICES; THIN FILMS; X RAY ANALYSIS; X RAY DIFFRACTION ANALYSIS; ZIRCONIUM ALLOYS;

ALD PRECURSORS; ATOMIC-FORCE MICROSCOPIES; COMPARATIVE STUDIES; ELECTRICAL PROPERTIES; GRAZING INCIDENCES; HIGH - K DIELECTRICS; HIGH RESOLUTIONS; HIGH SUBSTRATE TEMPERATURES; LEAKAGE CURRENT DENSITIES; OXIDIZING AGENTS; SI SUBSTRATES; TEM; TETRAGONAL PHASE; TETRAKIS; THERMAL STABILITIES; XRD; XRD ANALYSIS; ZR AMIDINATE (ZR-AMD) PRECURSOR; ZRO2 THIN FILM;

ZIRCONIUM;

EID: 59049096398     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.03.020     Document Type: Article

References (28)

1. Perkins C.M., Triplett B.B., McIntyre P.C., Saraswat K.C., Haukka S., and Tuominen M. Appl. Phys. Lett. 78 (2001) 2357
2. Balog M., Schieber M., Michman M., and Patai S. Thin Solid Films 47 (1977) 109
3. Jeon T.S., White J.M., and Kwong D.L. Appl. Phys. Lett. 78 (2001) 368
4. Qi W.-J., Nieh R., Lee B.H., Kang L., Jeon Y., and Lee J.C. Appl. Phys. Lett. 77 (2000) 3269
5. Park J., Choi B., Park N., Shin H., Lee J., and Kim J. Integr. Ferroelectr. 48 (2002) 23
6. Jeon C.-B., Kong S.-H., Shin H., Ahn J., and Kim J. Integr. Ferroelectr. 48 (2002) 33
7. Niinistö L., Ritala M., and Leskelä M. Mater. Sci. Eng. B 41 (1996) 23
8. Ritala M., Kukli K., Raisanen P.I., Leskelä M., Sajavaara T., and Keinonen J. Science 288 (2000) 319
9. Musgrave C.B., and Gordon R.G. Future Fab. Int. 18 (2005) 126
10. Copel M., Gribelyuk M., and Gusev E. Appl. Phys. Lett. 76 (2000) 436
11. Kukli K., Ritala M., Aarik J., Uustare T., and Leskelä M. J. Appl. Phys. 92 (2002) 1833
12. Kukli K., Ritala M., and Leskelä M. Chem. Vapor. Depos. 6 (2000) 297
13. Niinisto J., Putkonen M., Niinisto L., Kukli K., Ritala M., and Leskelä M. J. Appl. Phys. 95 (2004) 84
14. Hausmann D.M., Kim E., Becker J., and Gordon R.G. Chem. Mater. 14 (2002) 4350
15. Lim B.S., Rahtu A., Park J.-S., and Gordon R.G. Inorg. Chem. 42 (2003) 7951
16. Hauser J.R., and Ahmed K. AIP Conf. Proc. 449 (1998) 235
17. Huang S.-S., and Wu T.-B. J. Vac. Sci. Technol. B 22 (2004) 1940
18. International Centre for Diffraction Data, PDF file, 42-1164.
19. Zhao X., and Vanderbilt D. Phys. Rev. B 65 (2002) 233106
20. Ushakov S.V., Navrotsky A., Yang Y., Stemmer S., Kukli K., Ritala M., Leskela M.A., Fejes P., Demkov A., Wang C., Nguyen B.-Y., Triyoso D., and Tobin P. Phys. Status Solidi (b) 241 (2004) 2268
21. Chen L.-M., Lai Y.-S., and Chen J.S. Thin Solid Films 515 (2007) 3724
22. Cassir M., Goubin F., Bernay C., Vernoux P., and Lincot D. Appl. Surf. Sci. 193 (2002) 120
23. Aarik J., Aidla A., Mandar H., Uustare T., and Sammelselg V. Thin Solid Films 408 (2002) 97 2002
24. Huang S.-S., and Wu T.-B. J. Vac. Sci. Technol. B 22 6 (2004) 2702
25. Triyoso D.H., Hegde R.I., White B.E., and Tobin P.J. J. Appl. Phys. 97 (2005) 124107
26. Nieh R.E., Kang C.S., Cho H.-J., Onishi K., Choi R., Krishnan S., Han J.H., Kim Y.-H., Akbar M.S., and Lee J.C. IEEE Trans. Electron Dev. 50 (2003) 333
27. Kirsch P.D., Quevedo M.A., Krishnan S.A., Krug C., Alshareef H., Park C.S., Harris R., Moumen N., Neugroschel A., Bersuker G., Lee B.H., Wang J.G., Pant G., Gnade B.E., Kim M.J., Wallace R.M., Jur J.S., Lichtenwalner D.J., Kingon A.L., and Jammy R. Tech. Dig. Int. Electron Dev. Meet 23 (2006) 4
28. Zhang Z., Song S.C., Quevedo-Lopez M.A., Choi K., Kirsch P., Lysaght P., and Lee B.H. IEEE Electron Dev. Lett. 27 (2006) 185