Characteristics of zirconium based amorphous thin films deposited by Co-sputtering

Integrated Ferroelectrics

Volumn 48, Issue , 2002, Pages 33-40

  Jeon, Chang Bae ^a   Kong, Seong Ho ^a   Shin, Hyunjung ^a   Ahn, Jinho ^b   Kim, Jiyoung ^a  

^a Kookmin University   (South Korea)

^b Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CONCENTRATION (PROCESS); DIELECTRIC MATERIALS; GATES (TRANSISTOR); PERMITTIVITY; SPUTTERING;

GLASS FORMER MATERIALS; LEAKAGE CURRENT DENSITY; REACTIVE SPUTTERING;

THIN FILMS;

EID: 0012417781     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/713718326     Document Type: Article

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