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Volumn 48, Issue , 2002, Pages 23-32

Characteristics of ZrO2 thin films by atomic layer deposition for alternative gate dielectric applications

Author keywords

ALD; H2O; MO ALD; Zr t butoxide; ZrO2

Indexed keywords

CONTAMINATION; DEPOSITION; DIELECTRIC MATERIALS; DISPERSION (WAVES); GATES (TRANSISTOR); ZIRCONIUM COMPOUNDS;

CAPACITANCE EQUIVALENT THICKNESS (CET); GATE DIELECTRICS;

FERROELECTRIC THIN FILMS;

EID: 3142743639 PISSN: 10584587 EISSN: 16078489 Source Type: Journal
DOI: 10.1080/713718334 Document Type: Article

Times cited : (6)

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