Investigation of the Propagation Induced Pulse Broadening (PIPB) effect on single event transients in SOI and bulk inverter chains

IEEE Transactions on Nuclear Science

Volumn 55, Issue 6, 2008, Pages 2842-2853

  Cavrois, V Ferlet ^a   Pouget, V ^b   McMorrow, D ^c   Schwank, J R ^d   Fel, N ^a   Essely, F ^b   Flores, R S ^d   Paillet, P ^a   Gaillardin, M ^a   Kobayashi, D ^e   Melinger, J S ^c   Duhamel, O ^a   Dodd, P E ^d   Shaneyfelt, M R ^d  

^a DIF   (France)

^b UNIVERSITÉ BORDEAUX 1   (France)

^c NAVAL RESEARCH LABORATORY   (United States)

^d SANDIA NATIONAL LABORATORIES   (United States)

^e JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

Chains of inverters; Heavy ions; Propagation induced pulse broadening; Pulsed laser; Single event transients

Indexed keywords

BODIES OF REVOLUTION; CIRCUIT THEORY; HEAVY IONS; IONS; IRRADIATION; PULSED LASER APPLICATIONS; TRANSISTORS;

BULK TRANSISTORS; CHAINS OF INVERTERS; CIRCUIT MODELLING; CIRCUIT MODELS; COMPLEX CIRCUITS; FAULT INJECTIONS; FLOATING BODIES; FLOATING-BODY EFFECTS; HARDNESS ASSURANCES; HISTORY EFFECTS; LONG CHAINS; NANOSECOND RANGES; PROPAGATION INDUCED PULSE BROADENING; PULSE WIDTHS; PULSED LASER; SIMULATION TECHNIQUES; SINGLE EVENT TRANSIENTS;

TRANSIENTS;

EID: 58849108996     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.2007724     Document Type: Conference Paper

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