Generation and propagation of single event transients in 0.18-μm fully depleted SOI

IEEE Transactions on Nuclear Science

Volumn 55, Issue 6, 2008, Pages 2854-2860

  Gouker, Pascale ^a   Brandt, Jim ^a   Wyatt, Peter ^a   Tyrrell, Brian ^a   Soares, Anthony ^a   Knecht, Jeffrey ^a   Keast, Craig ^a   McMorrow, Dale ^b   Narasimham, Balaji ^c   Gadlage, Matthew ^c   Bhuva, Bharat ^c  

^a MIT LINCOLN LABORATORY   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c VANDERBILT UNIVERSITY   (United States)

Author keywords

Floating body; Fully depleted silicon on insulator; Heavy ions; Laser irradiation; Single event transients

Indexed keywords

BODIES OF REVOLUTION; HEAVY IONS; HIGH ELECTRON MOBILITY TRANSISTORS; IONS; IRRADIATION; LASERS; LOGIC CIRCUITS; MICROSENSORS; PULSED LASER APPLICATIONS; SILICON ON INSULATOR TECHNOLOGY; STATIC RANDOM ACCESS STORAGE; SWITCHING CIRCUITS;

BODY CONTACTS; CMOS PROCESS; FAST LOGIC; FLOATING BODY; FULLY DEPLETED; FULLY DEPLETED SILICON-ON-INSULATOR; HEAVY ION TESTING; LASER IRRADIATION; PROBING TECHNIQUES; SINGLE-EVENT TRANSIENTS; TRANSIENT PULSE;

TRANSIENTS;

EID: 58849086518     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.2007953     Document Type: Conference Paper

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