Digital device error rate trends in advanced CMOS technologies

IEEE Transactions on Nuclear Science

Volumn 53, Issue 6, 2006, Pages 3466-3471

  Gadlage, Matthew J ^a   Eaton, Paul H ^b   Benedetto, Joseph M ^c   Carts, Marty ^d   Zhu, Vivian ^e   Turflinger, Thomas L ^a  

^a NAVAL SURFACE WARFARE CENTER   (United States)

^b Microelectronics Research and Development Corporation   (United States)

^c NORTHROP GRUMMAN CORPORATION   (United States)

^d NASA GODDARD SPACE FLIGHT CENTER   (United States)

^e TEXAS INSTRUMENTS   (United States)

Author keywords

Heavy ion; Ion radiation effects; Single event upset (SEU)

Indexed keywords

BIT ERROR RATE; DIGITAL CIRCUITS; HEAVY IONS; RADIATION EFFECTS;

ERROR RATE; ION RADIATION EFFECTS; SINGLE EVENT UPSET (SEU);

CMOS INTEGRATED CIRCUITS;

EID: 33846280815     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.886212     Document Type: Conference Paper

References (13)

1. N. Seifert, X. Zhu, and L. W. Massengill, "Impact of scaling on softerror rates in commercial microprocessors," IEEE Trans. Nucl. Sci., vol. 49, pp. 3100-3106, Dec. 2003.
2. P. E. Dodd, M. R. Shaneyfelt, J. A. Felix, and J. R. Schwank, "Production and propagation of single-event transients in high-speed digital logic ICs," IEEE Trans. Nucl. Sci., vol. 51, pp. 3278-3284, Dec. 2004.
3. P. E. Dodd and L. W. Massengill, "Basic mechanisms and modeling of single-event upset in digital microelectronics," IEEE Trans. Nucl. Sci., vol. 50, pp. 583-602, Jun. 2003.
4. M. J. Gadlage, P. H. Eaton, J. M. Benedetto, and T. L. Turflinger, "Comparison of heavy ion and proton induced combinatorial and sequential logic error rates in a deep submicron process," IEEE Trans. Nucl. Sci., vol. 52, pp. 2120-2124, Dec. 2005.
5. P. Marshall, M. Carts, A. Campbell, R. Ladbury, R. Reed, C. Marshall, S. Currie, D. McMorrow, S. Buchner, C. Seidlick, P. Riggs, K. Fritz, B. Randall, and B. Gilbert, "A comparitive study of heavy ion and proton induced bit error sensitivity and complex burst error modes in commercially available high speed SiGe BiCMOS," IEEE Trans. Nucl. Sci., vol. 51, pp. 3457-3463, Dec. 2004.
6. S. Buchner and M. Baze, "Single-event transients in fast electronic circuits," in Proc. IEEE Nuclear and Space Radiation Effects Conf. Short Course Text, 2001.
7. D. G. Mavis and P. H. Eaton, "Soft error rate mitigation techniques for modern microcircuits," in Proc. 40th Annu. Reliability Physics Symp., 2002, pp. 216-225.
8. J. Benedetto, P. Eaton, K. Avery, D. Mavis, M. Gadlage, T. Turflinger, P. Dodd, and G. Vizkelethyd, "Heavy ion induced digital single-event transients in deep submicron processes," IEEE Trans. Nucl. Sci., vol. 51, pp. 3480-3485, Dec. 2004.
9. M. J. Gadlage, R. D. Schrimpf, P. H. Eaton, J. M. Benedetto, D. G. Mavis, M. Sibley, K. Avery, and T. L. Turflinger, "Single-event transient pulse widths in digital microcircuits," IEEE Trans. Nucl. Sci., vol. 51, pp. 3285-3290, Dec. 2004.
10. M. P. Baze and S. P. Buchner, "Attenuation of single event induced pulses in CMOS combinatorial logic," IEEE Trans. Nucl. Sci., vol. 44, pp. 2217-2223, Dec. 1997.
11. P. Eaton, J. Benedetto, D. Mavis, K. Avery, M. Sibley, M. Gadlage, and T. Turflinger, "Single event transient pulse width measurements using a variable temporal latch technique," IEEE Trans. Nucl. Sci., vol. 51, pp. 3365-3368, Dec. 2004.
12. J. Benedetto, P. Eaton, K. Avery, D. Mavis, M. Gadlage, and T. Turflinger, "Variations of digital SET pulse widths and the implications for single event hardening of advanced CMOS processes," IEEE Trans. Nucl. Sci., vol. 52, pp. 2114-2119, Dec. 2005.
13. A. J. Tylka, James, H. Adams, Jr., Paul, R. Boberg, B. Brownstein, W. F. Dietrich, E. O. Flueckiger, E. L. Petersen, M. A. Shea, D. F. Smart, and E. C. Smith, "CREME96: A revision of the cosmic ray effects on micro-electronics code," IEEE Trans. Nucl. Sci., vol. 44, pp. 2150-2160, Dec. 1997.