Pulsed laser-induced single event upset and charge collection measurements as a function of optical penetration depth

Journal of Applied Physics

Volumn 84, Issue 2, 1998, Pages 690-703

  Melinger, Joseph S ^a   McMorrow, Dale ^a   Campbell, A B ^a   Buchner, Stephen ^b   Tran, Lan Hu ^b   Knudson, A R ^b   Curtice, W R ^c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b SFA INC   (United States)

^c W R Curtice Consulting   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DYE LASERS; HETEROJUNCTION BIPOLAR TRANSISTORS; LASER PULSES; MESFET DEVICES; MICROELECTRONICS; MONOCHROMATORS; OPTICAL SYSTEMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

CHARGE COLLECTION MEASUREMENTS; OPTICAL PENETRATION DEPTH; OPTICALLY FLAT PYROELECTRIC JOULE METER; PICOSECOND TIME RESOLVED MEASUREMENT;

PULSED LASER APPLICATIONS;

EID: 0032527161     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368124     Document Type: Article

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