Assessing alpha particle-induced single event transient vulnerability in a 90-nm CMOS technology

IEEE Electron Device Letters

Volumn 29, Issue 6, 2008, Pages 638-640

  Gadlage, Matthew J ^a   Schrimpf, Ronald D ^a   Narasimham, Balaji ^a   Pellish, Jonathan A ^a   Warren, Kevin M ^a   Reed, Robert A ^a   Weller, Robert A ^a   Bhuva, Bharat L ^a   Massengill, Lloyd W ^a   Zhu, Xiaowei ^b  

^a VANDERBILT UNIVERSITY   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

Alpha particles; IC reliability; Radiation effects; Single event upset

Indexed keywords

ALPHA PARTICLES; HEAVY IONS; RADIATION EFFECTS; TRANSIENTS;

SINGLE-EVENT TRANSIENTS; SINGLE-EVENT UPSET; SOFT-ERROR RATE;

CMOS INTEGRATED CIRCUITS;

EID: 44849126892     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.922314     Document Type: Article

References (11)

1. R. C. Baumann, "Soft errors in advanced semiconductor devices - Part I: The three radiation sources," IEEE Trans. Device Mater. Rel., vol. 1, no. 1, pp. 17-22, Mar. 2001.
2. J. R. Letaw and E. Normand, "Guidelines for predicting single-event upsets in neutron environments [RAM devices]," IEEE Trans. Nucl. Sci., vol. 38, no. 6, pp. 1500-1506, Dec. 1991.
3. P. E. Dodd, M. R. Shaneyfelt, J. A. Felix, and J. R. Schwank, "Production and propagation of single-event transients in high-speed digital logic ICs," IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3278-3284, Dec. 2004.
4. B. Narasimham, V. Ramachandran, B. L. Bhuva, R. D. Schrimpf, A. F. Witulski, W. T. Holman, L. W. Massengill, J. D. Black, W. H. Robinson, and D. McMorrow, "On-chip characterization of single-event transient pulse widths," IEEE Trans. Device Mater. Rel., vol. 6, no. 4, pp. 542-549, Dec. 2006.
5. B. Narasimham, B. L. Bhuva, R. D. Schrimpf, L. W. Massengill, M. J. Gadlage, O. A. Amusan, W. T. Holman, A. F. Witulski, W. H. Robinson, J. D. Black, J. M. Benedetto, and P. H. Eaton, "Characterization of digital single event transient pulse-widths in 130-nm and 90-nm CMOS technologies," IEEE Trans. Nucl. Sci., vol. 54, no. 6, pp. 2506-2511, Dec. 2007.
6. L. W. Connell, P. J. McDaniel, A. K. Prinja, and F. W. Sexton, "Modeling the heavy ion upset cross section," IEEE Trans. Nucl. Sci., vol. 42, no. 2, pp. 73-82, Apr. 1995.
7. K. M. Warren, R. A. Weller, M. H. Mendenhall, R. A. Reed, D. R. Ball, C. L. Howe, B. D. Olson, M. L. Alles, L. W. Massengill, R. D. Schrimpf, N. F. Haddad, S. E. Doyle, D. McMorrow, J. S. Melinger, and W. T. Lotshaw, "The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM," IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2125-2131, Dec. 2005.
8. S. Agostinelli et al., "GEANT4 - A simulation toolkit," Nucl. Instrum. Methods Phys. Res., Sect. A, Accel. Spectrom. Detect. Assoc. Equip., vol. 506, no. 3, pp. 250-303, Jul. 2003.
9. K. M. Warren, B. D. Sierawski, R. A. Weller, R. A. Reed, M. H. Mendenhall, J. A. Pellish, R. D. Schrimpf, L. W. Massengill, M. E. Porter, and J. D. Wilkinson, "Predicting thermal neutron-induced soft errors in static memories using TCAD and physics-based Monte Carlo simulation tools," IEEE Electron Device Lett., vol. 28, no. 2, pp. 180-182, Feb. 2007.
10. O. A. Amusan, A. F. Witulski, L. W. Massengill, B. L. Bhuva, P. R. Fleming, M. L. Alles, A. L. Sternberg, J. D. Black, and R. D. Schrimpf, "Charge collection and charge sharing in a 130 nm CMOS technology," IEEE Trans. Nucl. Sci., vol. 53, no. 6, pp. 3253-3258, Dec. 2006.
11. R. C. Baumann and D. Radaelli, "Determination of geometry and absorption effects and their impact on the accuracy of alpha particle soft error rate extrapolations," IEEE Trans. Nucl. Sci., vol. 54, no. 6, pp. 2141-2148, Dec. 2007.