History dependence of output characteristics of silicon-on-insulator (SOI) MOSFET's

IEEE Electron Device Letters

Volumn 17, Issue 1, 1996, Pages 7-9

  Jenkins, K A ^a   Sun, J Y C ^a   Gautier, J ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; IONIZATION OF SOLIDS; SILICON ON INSULATOR TECHNOLOGY; VOLTAGE MEASUREMENT;

DRAIN BIASES; DRAIN CURRENT OVERSHOOT; IMPACT IONIZATION;

MOSFET DEVICES;

EID: 0029753842     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.475560     Document Type: Review

References (7)

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2. S. S. Eaton and B. Lalevic, "The effect of a floating substrate on the opration of silicon-on-sapphire transistors," IEEE Trans. Electron Devices, vol. ED-25, pp 907-912, 1978.
3. H. K. Lim and J. G. Fossum "Transisent drain current and propagation delay in SOI CMOS," IEEE Trans. Electron Devices, vol. ED ED-31, pp. 1251-1258, 1984.
4. G.-C. Tai, C. E. Korman and I. Mayergoyz, "Simulation of the transisent cheracteristics of partially- and fully-depleted SOI MOSFET's," Solid-State Electron., vol. 37, pp. 1387-1394, 1994.
5. D. Suh and J. G. Fossum, "Dynamic floating-body instabilities in partially depleted SOI CMOS circuits," in Tech. Dig. 1994 Int. Electron Device Mtg., 1994, pp. 661-664.
6. K. A. Jenkins and J. Y.-C. Sun, "Measurement of I-V curves of silicon-on-insulator (SOI) MOSFET's without self-heating," IEEE Electron Device Lett., vol. 16, pp. 139-141, 1995.
7. J. Gautier, K. A. Jenkins, and J. Y.-C. Sun, "Transient effects floating body SOI NMOSFET's," in proc. 1995 IEEE SOI Conf., 1995, pp. 112-113.