Pulsed laser single-event effects in highly scaled CMOS technologies in the presence of dense metal coverage

IEEE Transactions on Nuclear Science

Volumn 55, Issue 6, 2008, Pages 3401-3406

  Balasubramanian, Anupama ^a   McMorrow, Dale ^b   Nation, Sarah A ^a   Bhuva, Bharat L ^a   Reed, Robert A ^a   Massengill, Lloyd W ^a   Loveless, Thomas D ^a   Amusan, Oluwole A ^a   Black, Jeffrey D ^a   Melinger, Joseph S ^b   Baze, Mark P ^c   Ferlet Cavrois, Veronique ^c   Gaillardin, Marc ^c   Schwank, James R ^d  

^a VANDERBILT UNIVERSITY   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c CEA DIF   (France)

^d SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Complementary metal oxide semiconductor (CMOS); Laser; Metal fill; Single event (SE); Single photon absorption (SPA); Two photon absorption (TPA)

Indexed keywords

ABSORPTION; DEMULTIPLEXING; DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; LASERS; LIGHT ABSORPTION; LUMINESCENCE OF ORGANIC SOLIDS; METALS; OPTICAL MATERIALS; PARTICLE BEAMS; PHOTONS; PULSED LASER APPLICATIONS; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; SPONTANEOUS EMISSION; STATISTICAL PROCESS CONTROL;

COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS); LASER; METAL-FILL; SINGLE EVENT (SE); SINGLE-PHOTON ABSORPTION (SPA); TWO-PHOTON ABSORPTION (TPA);

MULTIPHOTON PROCESSES;

EID: 58849157324     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.2007295     Document Type: Conference Paper

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