Insights on the transient response of fully and partially depleted SOI technologies under heavy-ion and dose-rate irradiations

IEEE Transactions on Nuclear Science

Volumn 49 I, Issue 6, 2002, Pages 2948-2956

  Ferlet Cavrois, V ^a   Gasiot, G ^a,b   Marcandella, C ^a   D'Hose, C ^a   Flament, O ^a   Faynot, O ^c   Du Port de Pontcharra, J ^c   Raynaud, C ^c  

^a CEA DIF   (France)

^b STMICROELECTRONICS   (France)

^c CEA GRENOBLE   (France)

Author keywords

Critical charge; Cross section; Current gain; Device simulation; Doping profile; Dose rate; Fully depleted; Heavy ion; Impact ionization; Lightly doped drain; Linear energy transfer; MOS transistor; Parasitic bipolar transistor; Partially depleted; Radiation

Indexed keywords

BIPOLAR TRANSISTORS; COMPUTER SIMULATION; HEAVY IONS; IMPACT IONIZATION; IRRADIATION; MOSFET DEVICES; SEMICONDUCTOR DOPING;

SHALLOW JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 0036952891     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.805439     Document Type: Conference Paper

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