Direct measurement of SET pulse widths in 0.2-μm SOI logic cells irradiated by heavy ions

IEEE Transactions on Nuclear Science

Volumn 53, Issue 6, 2006, Pages 3575-3578

  Yanagawa, Y ^b   Hirose, K ^a,c,d   Saito, H ^a,b,c   Kobayashi, D ^a,c,d   Fukuda, S ^b,c   Ishii, S ^e   Takahashi, D ^e   Yamamoto, K ^e   Kuroda, Y ^e  

^a IEEE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^d GRADUATE UNIVERSITY FOR ADVANCED STUDIES   (Japan)

^e MITSUBISHI HEAVY INDUSTRIES LTD   (Japan)

Author keywords

Direct measurement; Heavy ion irradiation; Silicon on insulator technology; Single event transient

Indexed keywords

DIRECT MEASUREMENT; HEAVY ION IRRADIATION; PULSE WIDTHS; SINGLE EVENT TRANSIENT;

HEAVY IONS; IRRADIATION; LOGIC GATES;

SILICON ON INSULATOR TECHNOLOGY;

EID: 33846306313     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.885110     Document Type: Conference Paper

References (8)

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