Estimation of single event transient voltage pulses in VLSI circuits from heavy-ion-induced transient currents measured in a single MOSFET

IEEE Transactions on Nuclear Science

Volumn 54, Issue 4, 2007, Pages 1037-1041

  Kobayashi, Daisuke ^a,b,c   Saito, Hirobumi ^a,b   Hirose, Kazuyuki ^a,d  

^a IEEE

^b JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^c GRADUATE UNIVERSITY FOR ADVANCED STUDIES   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

Estimation; Graphical derivation; Heavy ions; Integrated circuit radiation effects; Semiconductor device radiation effects; Simulation; Single event transients (SETs); Transient currents; Voltage pulses

Indexed keywords

CIRCUIT SIMULATION; HEAVY IONS; INTEGRATED CIRCUITS; IRRADIATION; MOSFET DEVICES; RADIATION EFFECTS; TRANSIENTS; WAVEFORM ANALYSIS;

GRAPHICAL DERIVATION; SINGLE EVENT TRANSIENTS (SETS); TRANSIENT CURRENTS; TRANSIENT VOLTAGE;

VLSI CIRCUITS;

EID: 34548090692     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.891397     Document Type: Conference Paper

References (11)

1. S. Buchner, M. Baze, D. Brown, D. McMorrow, and J. Melinger, "Comparison of error rates in combinational and sequential logic," IEEE Trans. Nucl. Sci., vol. 44, no. 6, pp. 2209-2216, Dec. 1997.
2. M. J. Gadlage, R. D. Schrimpf, J. M. Benedetto, P. H. Eaton, D. G. Mavis, M. Sibley, K. Avery, and T. L. Turflinger, "Single event transient pulse widths in digital microcircuits," IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3285-3290, Dec. 2004.
3. J. Benedetto, P. Eaton, K. Avery, D. Mavis, M. Gadlage, T. Turflinger, P. E. Dodd, and G. Vizkelethyd, "Heavy ion-induced digital singleevent transients in deep submicron processes," IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3480-3485, Dec. 2004.
4. O. Musseau, V. Ferlet-Cavrois, J. L. Pelloie, S. Buchner, D. McMorrow, and A. B. Campbell, "Laser probing of bipolar amplification in 0.25-μm MOS/SOI transistors," IEEE Trans. Nucl. Sci., vol. 47, no. 6, pp. 2196-2203, Dec. 2000.
5. T. Colladant, O. Flament, A. L'Hoir, V. Ferlet-Cavrois, C. D'Hose, and J. du Port de Pontcharra, "Study of transient current induced by heavy-ion in NMOS/SOI transistors," IEEE Trans. Nucl. Sci., vol. 49, no. 6, pp. 2957-2964, Dec. 2002.
6. V. Ferlet-Cavrois, P. Paillet, D. McMorrow, A. Torres, M. Gaillardin, J. S. Melinger, A. R. Knudson, A. B. Campbell, J. R. Schwank, G. Vizkelethy, M. R. Shaneyfelt, K. Hirose, O. Faynot, C. Jahan, and L. Tosti, "Direct measurement of transient pulses induced by laser and heavy ion irradiation in deca-nanometer devices," IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2104-2113, Dec. 2005.
7. V. Ferlet-Cavrois, P. Paillet, M. Gaillardin, D. Lambert, J. Baggio, J. R. Schwank, G. Vizkelethy, M. R. Shaneyfelt, K. Hirose, E. W. Blackmore, O. Faynot, C. Jahan, and L. Tosti, "Statistical analysis of the charge collected in SOI and bulk devices under heavy ion irradiation-implications for digital SETs," IEEE Trans. Nucl. Sci., vol. 53, no. 6, pp. 3242-3252, Dec. 2006.
8. D. Kobayashi, M. Aimi, H. Saito, and K. Hirose, 'Time-domain component analysis of heavy-ion-induced transient currents in fully-depleted SOI MOSFETs," IEEE Trans. Nucl. Sci., vol. 53, no. 6, pp. 3372-3378, Dec. 2006.
9. D. McMorrow, V. Ferlet-Cavrois, P. Paillet, O. Duhamel, J. Baggio, J. B. Boos, and J. S. Melinger, "Transient response of semiconductor electronics to ionizing radiation: Recent developments in charge-collection measurement," presented at the Radiation Effects on Components and Systems Workshop, Athens, Greece, Sep. 27-29, 2006.
10. N. H. E. Weste and K. Eshraghian, Principles of CMOS VLSI Design - A Systematic Perspective, 2nd ed. Boston, MA: Addison-Wesley, 1993.
11. D. McMorrow, private communication, Radiation Effects on Components and Systems Workshop, Athens, Greece, Sep. 27-29, 2006.