Pentacene islands grown on ultra-thin SiO2

Surface Science

Volumn 603, Issue 3, 2009, Pages

  Conrad, B R ^a   Cullen, W G ^a   Riddick, B C ^a   Williams, E D ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

Nanotechnology; Organic semiconductors; Pentacene; Roughness; Scanning tunneling microscopy; Silicon oxides; Ultra thin oxide

Indexed keywords

CRYSTALS; ELECTRIC CONDUCTIVITY; NANOTECHNOLOGY; OXIDES; SCANNING; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SILICA; SILICON COMPOUNDS; SILICON OXIDES; SUBSTRATES; TUNNELING (EXCAVATION); VACUUM;

LONG RANGE; ORGANIC SEMICONDUCTORS; PENTACENE; ROOM TEMPERATURE GROWTH; ROOM-TEMPERATURE (RT); ROOT MEAN SQUARE ROUGHNESS (RMS); ROUGHNESS; STEP STRUCTURES; ULTRA-THIN OXIDE; UNIT CELLS;

OXIDE FILMS;

EID: 58749093385     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2008.12.020     Document Type: Article

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