Real-time monitoring of SiO2/Si(1 1 1) interlayer etching by Brewster-angle reflectometry

Surface Science

Volumn 602, Issue 9, 2008, Pages 1677-1687

  Lublow, M ^a   Lewerenz, H J ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

Atomic force microscopy; Computer simulations; Electrochemical methods; Etching; Physical adsorption; Reflection spectroscopy; Semiconductor insulator interfaces; Silicon; Silicon oxides; Solid liquid interfaces; Surface roughening; Synchrotron radiation photoelectron spectroscopy

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH FROM MELT; REFLECTION; REFLECTOMETERS; SYNCHROTRON RADIATION;

BREWSTER-ANGLE REFLECTOMETRY (BAR); NEAR OPEN-CIRCUIT POTENTIAL;

SILICA;

EID: 42649130028     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2008.03.001     Document Type: Article

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