Nonuniformity in ultrathin SiO2 on Si(111) characterized by conductive atomic force microscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 11 B, 2004, Pages 7861-7865

  Hasunuma, Ryu ^a,b   Okamoto, Junichi ^a   Tokuda, Norio ^a   Yamabe, Kikuo ^a,b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b Tsukuba Research Center for Interdisciplinary Materials Science TIMS   (Japan)

Author keywords

Conductive atomic force microscope; Correlation coefficient; Leakage current; SiO2; Thickness fluctuation

Indexed keywords

ATOMIC FORCE MICROSCOPY; CORRELATION METHODS; LEAKAGE CURRENTS; MORPHOLOGY; OXIDATION; SURFACE PROPERTIES; THICKNESS MEASUREMENT; ULTRATHIN FILMS;

CONDUCTIVE ATOMIC FORCE MICROSCOPES; CORRELATION COEFFICIENT; SIO2; THICKNESS FLUCTUATIONS;

SILICA;

EID: 12844288635     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.7861     Document Type: Conference Paper

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