Analysis on electrical properties of ultrathin SiO2/Si(111) interfaces with an atomic force microscope

Applied Surface Science

Volumn 162, Issue , 2000, Pages 547-552

  Hasunuma, Ryu ^a   Ando, Atsushi ^b   Miki, Kazushi ^b   Nishioka, Yasushiro ^a  

^a Texas Instruments Japan Ltd   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; INTERFACES (MATERIALS); OXIDATION; SEMICONDUCTING SILICON; SILICA; ULTRATHIN FILMS;

POST-OXIDATION ANNEALING;

SEMICONDUCTING FILMS;

EID: 0034245934     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00248-8     Document Type: Article

References (11)

1. Tanamoto T., Toriumi A. Jpn. J. Appl. Phys. 36:1997;1439.
2. O'Shea S.J., Atta R.M., Murrell M.P., Welland M.E. J. Vac. Sci. Technol., B. 13:1995;1945.
3. Deal B.E., Mackenna E.L., Castro P.L. J. Electrochem. Soc. 116:1969;997.
4. Green M.A., King F.D., Shewchun J. Solid-State Electron. 17:1974;551.
5. Sakoda T., Matsumura M., Nishioka Y. Appl. Surf. Sci. 117/118:1997;241.
6. Komeda T., Namba K., Nishioka Y. J. Vac. Sci. Technol., A. 16:1998;1680.
7. Watanabe H., Fujita K., Ichikawa M. Surf. Sci. 385:1997;L952.
8. Ohishi K., Hattori T. Jpn. J. Appl. Phys. 33:1994;L675.
9. Hattori T., Fujimura M., Yagi T., Ohashi M. Appl. Surf. Sci. 123/124:1998;87.
10. Yasuda T., Ma Y., Lucovsky G. SSDM. 1994;847.
11. Miyata N., Watanabe H., Ichikawa M. Phys. Rev. [Sect.] B. 58:1998;13670.