Combined AFM and Brewster-angle analysis of gradually etched ultrathin SiO2 - Comparison with SRPES results

Surface Science

Volumn 601, Issue 7, 2007, Pages 1693-1700

  Lublow, M ^a   Lewerenz, H J ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

Atomic force microscopy; Dielectric phenomena; Etching; Reflection spectroscopy; Silicon; Silicon oxides; Surface structure, morphology, roughness and topography; Synchrotron radiation photoelectron spectroscopy

Indexed keywords

ATOMIC FORCE MICROSCOPY; ETCHING; MORPHOLOGY; PHOTOELECTRON SPECTROSCOPY; SURFACE ROUGHNESS; SURFACE STRUCTURE; SYNCHROTRON RADIATION;

MULTILAYER SYSTEMS; REFLECTION SPECTROSCOPY; SILICON OXIDES;

ULTRATHIN FILMS;

EID: 33947605159     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2007.01.038     Document Type: Article

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