Effect of impurities on pentacene thin film growth for field-effect transistors

Journal of Physical Chemistry C

Volumn 112, Issue 14, 2008, Pages 5646-5650

  Gomar Nadal, Elba ^a   Conrad, Brad R ^a   Cullen, William G ^a   Willams, Ellen D ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMERICAN CHEMICAL SOCIETY (ACS); ATOMIC FORCE (AF); CONCENTRATION (COMPOSITION); DEVICE MOBILITY; EARLY STAGES; ELECTRICAL MEASUREMENTS; FIELD EFFECT TRANSISTOR (FET); FILM MORPHOLOGY; FILM STRUCTURES; GRAIN BOUNDARY STRUCTURES; GRAIN SIZES; HOMOGENEOUSLY DISTRIBUTED; IMPURITY CONCENTRATIONS; IMPURITY CONTENT; LOW CONCENTRATIONS; NUMBER DENSITIES; PENTACENE (PEN); PENTACENE THIN FILMS; PENTACENE THIN-FILM TRANSISTORS; SOURCE MATERIALS;

AGRICULTURAL PRODUCTS; ATOMIC FORCE MICROSCOPY; CONCENTRATION (PROCESS); CRYSTAL GROWTH; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; GRAIN (AGRICULTURAL PRODUCT); GRAIN BOUNDARIES; GRAIN GROWTH; GRAIN SIZE AND SHAPE; IMAGING TECHNIQUES; IMPURITIES; MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; SCANNING PROBE MICROSCOPY; SEMICONDUCTING ORGANIC COMPOUNDS; THICK FILMS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

FILM GROWTH;

EID: 44449103953     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp711622z     Document Type: Article

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