Physical phenomena affecting performance and reliability of 4H-SiC bipolar junction transistors

Microelectronics Reliability

Volumn 49, Issue 1, 2009, Pages 32-37

  Muzykov, Peter G ^a   Kennedy, Robert M ^b   Sudarshan, Tangali S ^a  

^a The Department of Mechanical Engineering   (United States)

^b SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

^c Jon)   (United States)

Author keywords

BJT; EBIC; SiC; Stacking fault

Indexed keywords

BIPOLAR TRANSISTORS; DEGRADATION; ELECTRIC CURRENTS; MOSFET DEVICES; POTASSIUM; POTASSIUM HYDROXIDE; RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; STACKING FAULTS; TRANSISTORS; TUNNEL DIODES;

BEFORE AND AFTER; BIPOLAR DIODES; BIPOLAR JUNCTION TRANSISTORS; BJT; BJT STRUCTURES; COMMERCIAL PRODUCTIONS; CURRENT GAINS; DEVICE CURRENTS; DEVICE PERFORMANCES; EBIC; ELECTRICAL DEGRADATIONS; ELECTRICAL PERFORMANCES; FABRICATION METHODOLOGIES; FORWARD VOLTAGES; INDUCED STRUCTURES; PERFORMANCE RELIABILITIES; PHYSICAL MECHANISMS; SIC; SIC BIPOLAR JUNCTION TRANSISTORS; SWITCHING LOSSES; VOLTAGE BLOCKING; VOLTAGE SWITCHING;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 58149125230     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.10.009     Document Type: Article

References (36)

1. 2, high-voltage 4H-SiC vertical-channel JFETs for high-power applications. Device Research Conference; 2006. p. 159-60.
2. Sankin I., Bondarenko V., Kelley R., and Casady J.B. SiC smart power JFET technology for high-temperature applications. Mater Sci Forum 1 2 (2006) 1207-1210
3. Rozario LV, Sadwick LP, Hwu RJ, King DB. SiC BGJFET inverter for high temperature/power applications. In: Fourth International High Temperature Electronics Conference, HITEC; 1998. p. 29-33.
4. Kelley R, Mazzola MS. SiC JFET gate driver design for use in DC/DC converters. APEC 2006. In: 21st Annual IEEE Applied Power Electronics Conference and Exposition; 2005. p. 4.
5. Schafmeister F, Herold S, Kolar JW. Evaluation of 1200 V-Si-IGBTs and 1300 V-SiC-JFETs for application in three-phase very sparse matrix AC-AC converter systems. APEC 2003. In: 18th Annual IEEE Applied Power Electronics Conference and Exposition 2003;1:241-55.
6. Sei-Hyung R., Agarwal A.K., Richmond J., and Palmour J.W. 4H-SiC DMOSFETs for high frequency power switching applications. Mater Res Soc Symp Proc 764 (2003) 69-74
7. Gudjonsson G., Allerstam F., Olafsson H.O., Nilsson P.A., Hjelmgren H., Andersson K., et al. High-power-density 4H-SiC RF MOSFETs. IEEE Elect Device Lett 27 (2006) 469-471
8. Agarwal A., Sei-Hyung R., Capell C., Richmond J., Palmour J.W., Phan B., et al. SiC BJT's for high power switching and RF applications. Mater Res Soc Symp Proc 742 (2003) 341-346
9. Li X, Luo Y, Fursin L, Zhao JH, Pan M, Alexandrov P et al. 4H-SiC BJT and Darlington switch for power inverter applications. In: International Semiconductor Device Research Symposium, Symposium Proceedings; 2001. p. 9-12.
10. Zhao J.H., Zhang J., Luo Y., Hu X., Li Y., Yu H., et al. The first 4H-SiC BJT-based 20 kHz, 7HP PWM DC-to-AC inverter for induction motor control applications. Mater Sci Forum 460 (2004) 1137-1140
11. diff,on. Mater Sci Forum 557 (2007) 771-774
12. Seshadri S., Agarwal A.K., Rowland L.B., Casady J.B., Brandt C.D., Barrows J., et al. Demonstration of a 700 V asymmetrical, 4H-SiC gate-turn-off thyristor (GTO). Ann Dev Res Conf Digest (1997) 36-37
13. Richmond J., Ryu S.-H., Das M., Krishnaswami S., Hodge Jr. S., Agarwal A., et al. An overview of Cree silicon carbide power devices. Power Electron Transport (2004) 37-42
14. Palmour J.W., Edmond J.A., Kong H.-S., and Carter Jr. C.H. 6H-silicon carbide power devices for aerospace applications. Proc 28th Intersoc Energy Convers Eng Conf 1 (1993) 249-254
15. Scofield J., Kosai H., Jordan B., Sei-Hyung R., Krishnaswami S., Husna F., et al. High temperature DC-DC converter performance comparison using SiC JFETs, BJTs and Si MOSFETs. Mater Sci Forum 557 (2007) 991-994
16. Yan G., Huang A.Q., Qingchun Z., Sumi K., and Agarwal A.K. Analysis of operational degradation of SiC BJT characteristics. Proc 19th Int Symp Power Semiconductor Devices Ics (2007) 121-124
17. Agarwal A., Krishnaswami S., Richmond J., Capell C., Sei-Hyung R., Palmour J., Jones K., and Scozzie C. Degradation of current gain in SiC BJTs. Mater Res Soc Symp Proc 911 (2006) 431-436
18. Agarwal A., Krishnaswami S., Richmond J., Capell C., Ryu S.-H., Palmour J., et al. Influence of basal plane dislocation induced stacking faults on the current gain in SiC BJTs. Mater Sci Forum 529 (2006) 1409-1412
19. Pirouz P., Ming Z., Galeckas A., and Linnros J. Microstructural aspects and mechanism of degradation of 4H-SiC PiN diodes under forward biasing. Mater Res Soc Symp Proc 815 (2004) 91-102
20. Maximenko S., Soloviev S., Grekov A., Bolotnikov A., Gao Y., and Sudarshan T.S. Study of Forward Voltage Drift in Diffused SiC PiN Diodes Doped by Al or B. Mater Sci Forum 485 (2005) 989-992
21. Soloviev S., Cherednichenko D., Gao Y., Grekov A., Ma Y., and Sudarshan T.S. Forward voltage drop degradation in diffused SiC p-i-n diodes. J Appl Phys 95 (2004) 4376-4380
22. Sumakeris J., et al. Techniques for minimizing the basal plane dislocation density in SiC Epilayers to reduce Vf Drift in SiC bipolar power devices. Mater Sci Forum 529 (2006) 141-146
23. Iwata H.P., Linderfelt U., Oberg S., and Briddon P.R. Stacking faults in silicon carbide. Phys B 340 (2003) 165-170
24. Miao M.S., Sukit L., Walter R., and Lambrecht L. Stacking fault band structure in 4H-SiC and its impact on electronic devices. Appl Phys Lett 79 (2001) 4360-4362
25. Hisaomi I., Ulf L., Sven O., and Patrick R B. Theoretical study of planar defects in silicon carbide. J Phys: Condens Matter 14 (2002) 12733-12740
26. Skowronski M., and Ha S. Degradation of hexagonal silicon-carbide-based bipolar devices. J Appl Phys 99 (2006) 011101
27. Iwata H.P., Lindefelt U., berg S.O., and Briddon P.R. Stacking faults in silicon carbide. Phys B 342 (2003) 165-170
28. Bolotnikov A.V., Muzykov P.G., and Sudarshan T.S. Analysis of Nonexponential Deep-Level Current Transients in Schottky Diodes Fabricated on [1-100] 6H-SiC. J Elect Mater 35 (2006) 1132
29. SchtiBler M., Mottet B., Sydlo C., Krozer V., Hartnagel H.L., and Jakoby R. Model for the decrease in HBT collector current under DC stress based on recombination enhanced defect reactions. Microelectron Reliab 40 (2000) 1733-1738
30. Kimerling L.C. Recombination enhanced defect reactions. Solid-State Electron 21 (1978) 1391-1401
31. Zhang Z., Stahlbush R.E., Pirouz P., and Sudarshan T.S. Characteristics of dislocation half-loop arrays in 4H-SiC homo-epilayer. J Electron Mater 36 (2007) 539-542
32. Ha S., Skowronski M., and Lendenmann H. Nucleation sites of recombination-enhanced stacking fault formation in silicon carbide p-i-n diodes. J Appl Phys 96 (2004) 393-398
33. Weyher J.L., Lazar S., Borysiuk J., and Pernot J. Defect-selective etching of SiC. Phys Stat Sol (a) 20 (2005) 578-583
34. Singh R. Reliability and performance limitations in SiC power devices. Microelectron Reliab 46 (2006) 713-730
35. Skowronski M., Liu J.Q., Vetter W.M., Dudley M., Hallin C., and Lendenmann H. J Appl Phys 92 (2002) 4699
36. Maximenko S.I., and Sudarshanan T.S. Stacking fault nucleation sites in diffused 4H-SiC p-i-n diodes. J Appl Phys 97 (2005) 074501