An overview of cree silicon carbide power devices

IEEE Workshop on Power Electronics in Transportation

Volumn , Issue , 2004, Pages 37-42

  Richmond, Jim ^a   Ryu, Sei Hyung ^a   Das, Mrinal ^a   Krishnaswami, Sumi ^a   Hodge Jr , Stuart ^a   Agarwal, Anant ^a   Palmour, John ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

JUNCTION BARRIER SCHOTTKY (JBS); PIN DIODES; SCHOTTKY METAL INTERFACES; WIDE BANDGAP;

ELECTRIC POTENTIAL; LIGHT EMITTING DIODES; MOSFET DEVICES; NETWORKS (CIRCUITS); SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

POWER ELECTRONICS;

EID: 17744384924     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. M.K. Das, J.J. Sumakeris, B.A. Hull, J. Richmond, S. Krishnaswami, and A.R. Powell: Drift-Free, 50 A, 10 kV, 4H-SiC PiN Diodes with Improved Device Yields (European Conference on Silicon Carbide and Related Materials, Bologna, Italy, Sept. 2004).
2. Sei-Hyung Ryu, Sumi Krishnaswami, Mrinal Das, James Richmond, Anant Agarwal, John Palmour, and James Scofield, 4H-SiC DMOSFETs for High Speed Switching Applications", presented at the 5th European Conference on Silicon Carbide
3. Sumi Krishnaswami, Anant Agarwal, Craig Capell, Jim Richmond, Sei-Hyung Ryu, John Palmour, Santosh Balachandran, T. Paul Chow, Stephen Bayne, Bruce Geil, Kenneth A. Jones and Charles Scozzie' "1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs", presented at the 5th European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna, Italy, Sept 1-4, 2004.
4. th International All Electric Combat Vehicle (AECV) Conference, Angers, France, June 2-5, 2003.