Study of forward voltage drift in diffused SiC PIN diodes doped by Al or B

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 989-992

  Maximenko, S ^a   Soloviev, S ^a   Grekov, A ^a   Bolotnikov, A ^a   Gao, Y ^a   Sudarshan, T S ^a  

^a The Department of Mechanical Engineering   (United States)

Author keywords

Diffusion; PIN diodes; Stacking faults

Indexed keywords

ALUMINUM; BORON; CURRENT DENSITY; ELECTRIC POTENTIAL; NUCLEATION; SEMICONDUCTOR DOPING; SILICON CARBIDE; STACKING FAULTS;

B-DOPED DIODES; DEGRADATION TESTING; SIC PIN DIODES;

SCHOTTKY BARRIER DIODES;

EID: 35148834225     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.989     Document Type: Conference Paper

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