SiC BJT's for high power switching and RF applications

Materials Research Society Symposium - Proceedings

Volumn 742, Issue , 2002, Pages 341-346

  Agarwal, Anant ^a   Ryu, Sei Hyung ^a   Capell, Craig ^a   Richmond, James ^a   Palmour, John W ^a   Phan, Binh ^b   Stambaugh, Jerry ^b   Bartlow, Howard ^b   Brewer, Ken ^b  

^a Arkansas Power Electronics International Inc   (United States)

^b Cree Microwave   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; FREQUENCIES; POWER AMPLIFIERS; SWITCHING;

POWER SWITCHING;

SILICON CARBIDE;

EID: 0037617865     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-742-k7.3     Document Type: Conference Paper

References (4)

1. Sei-Hyung Ryu, Anant Agarwal, James Richmond, John Palmour, Nelson Saks and John Williams, "10 A, 2.4 kV Power DiMOSFETs in 4H-SiC," IEEE Electron Device Letters, Vol. 23, pp. 321-323, June 2002.
2. A. Agarwal, S. Ryu, R. Singh, O. Kordina, and J. Palmour, "2600 V, 12A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development,"presented at ICSCRM'99, Oct. 10-15, 1999, RTP. NC.
3. Sei-Hyung Ryu, Anant K. Agarwal, Ranbir Singh and John W. Palmour, "1800 V NPN Bipolar Junction Transistors in 4H-SiC," IEEE Electron Device Letters, Vol. 22, pp. 124-126, March 2001.
4. Yi Tang, Jefferey B. Fedison, and T. Paul Chow, "An Implanted-Emitter 4H-SiC Bipolar Transistor with High Current Gain," IEEE Electron Device Letters, Vol. 22, pp.119-120, March 2001.