4H-SiC BJT and Darlington switch for power inverter applications

2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings

Volumn , Issue , 2001, Pages 9-12

  Li, X ^a   Luo, Y ^a   Fursin, L ^a   Zhao, J H ^a   Pan, M ^b   Alexandrov, P ^b   Weiner, M ^b  

^a RUTGERS UNIVERSITY   (United States)

^b UNITED SILICON CARBIDE INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CARRIER LIFETIME; DOPING (ADDITIVES); ELECTRIC INVERTERS; POWER BIPOLAR TRANSISTORS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING;

CURRENT GAINS; DARLINGTON; DOPING LEVELS; HALF BRIDGE INVERTER; POWER BJTS; POWER INVERTERS; TEMPERATURE COEFFICIENT; TWO-DIMENSIONAL NUMERICAL SIMULATION;

SILICON CARBIDE;

EID: 84961785316     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2001.984426     Document Type: Conference Paper

References (5)

1. J. Wang and B.W. Williams, "The 4H-SiC npn power bipolar junction transistor," Semicond. Sci. Technol., Vol. 14, pp.1088-1097, 1999.
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3. Y. Luo, L. Fursin, and J.H. Zhao, "Demonstration of 4H-SiC power bipolar junction transistors," Electronics Letters, vol.36, no.17, pp.1496-1497, 2000.
4. Y. Tang, J.B. Fedison, and T. Paul Chow, "An implanted-emitter 4H-SiC bipolar transistor with high current gain," IEEE Electron device letters, Vol.22, no.3, pp.119-120, 2001.
5. Sei-Hyung Ryu, Anant K. Agarwal, Singh Ranbir, and J. W. Palmour, "1800V NPN bipolar junction transistors," IEEE Electron Devices Letters, vol.22. no.3, pp.124-126, 2001.