Model for the decrease in HBT collector current under DC stress based on recombination enhanced defect reactions

Microelectronics Reliability

Volumn 40, Issue 8-10, 2000, Pages 1733-1738

  Schußler M ^a   Mottet, B ^a   Sydlo, C ^a   Krozer, V ^b   Hartnagel, H L ^a   Jakoby, R ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^b CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 8444220187     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(00)00117-7     Document Type: Article

References (8)

1. T. Henderson, Model for Degradation of GaAs/AlGaAs HBTs under Temperature and Current Stress, IEDM, Tech. Digest, pp. 811-815, 1995.
2. Handbook of III-V Heterojunction Bipolar Transistors, William Liu, John Wiley & Sons Inc. , 1998.
3. O. Ueda, Degradation of III-V opto-electronic devices, J. Electrochem. Society., vol 135, pp. 11c-22c, 1988.
4. L.C. Kimerling, Recombination enhanced defect reactions, Solid-State Electronics, vol. 21,pp. 1391-1401, 1978.
5. J.L. Benton, M. Levinson, A.T. Temkin, and L.C. Kimerling, Recombination enhanced defect annealing in n-InP, Appl. Phys. Lett., vol. 45, pp. 566-568, 1984.
6. M.G. Adlerstein, J.M. Gering, Current Induced Degradation in GaAs HBT's, IEEE Trans, on Electron Devices, Vol. 47, pp. 434-439, Feb. 2000.
7. nd Edition, John Wiley & Sons, 1981.
8. N. Bovolon, R. Schultheis, J.E. Müller, P. Zwicknagel, Analysis of the Short-Term DC-Current Gain Variation During High Current Density-Low Temperature Stress of AlGaAs/GaAs HBT, IEEE Trans. on Electron Devices, Vol. 47, pp. 274-281, Feb. 2000.