High temperature DC-DC converter performance comparison using SiC JFETs, BJTs and Si MOSFETs

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 991-994

  Scofield, James ^a   Kosai, Hiroyuki ^a   Jordan, Brett ^a   Ryu, Sei Hyung ^b   Krishnaswami, Sumi ^b   Husna, Fatima ^b   Agarwal, Anant ^b  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

BJT; Converter; DC DC; High temperature; JFET

Indexed keywords

BRIDGE CIRCUITS; CERAMIC MATERIALS; DC-DC CONVERTERS; ELECTRIC INVERTERS; ELECTRIC RECTIFIERS; JUNCTION GATE FIELD EFFECT TRANSISTORS; MOSFET DEVICES; PRINTED CIRCUIT BOARDS; SILICON CARBIDE;

CONVERTER; DC-DC; EXTREME ENVIRONMENT; HIGH TEMPERATURE; HIGH TEMPERATURE CERAMIC FILTER; INDUCTIVE SWITCHING; INVERTER SWITCHINGS; STATIC AND DYNAMIC CHARACTERISTICS;

POWER BIPOLAR TRANSISTORS;

EID: 34547179834     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.991     Document Type: Conference Paper

References (4)

1. J. Scofield et. al.: presented at MRS spring meeting, April 17 - 21 2006 San Francisco CA.
2. S. Krishnaswami et. al.: IEEE Electron Device Letters Vol 26 No 3 (2005), p. 175.
3. B. Ray et. al.: Proc. IEEE APEC Austin TX (2005), p. 315
4. R. Spyker et. al.: Proc. IEEE APEC Austin TX (2005) p. 1275