Analysis of operational degradation of SiC BJT characteristics

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2007, Pages 121-124

  Gao, Yan ^a   Huang, Alex Q ^a   Zhang, Qingchun ^b   Krishnaswami, Sumi ^b   Agarwal, Anant K ^b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SURFACE RECOMBINATION CURRENT; SURFACE STATES;

DEGRADATION; ELECTRIC RESISTANCE; GAIN CONTROL; INTERFACES (MATERIALS); SILICON CARBIDE;

BIPOLAR TRANSISTORS;

EID: 39749190642     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2007.4294947     Document Type: Conference Paper

References (8)