SiC BGJFET inverter for high temperature/power applications

1998 4th International High Temperature Electronics Conference, HITEC 1998

Volumn , Issue , 1998, Pages 29-34

  Rozario, L V ^a   Sadwick, L P ^a   Hwu, R J ^a   King, D B ^b  

^a University of Utah   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INVERTERS; ELECTRIC NETWORK ANALYSIS; HIGH TEMPERATURE APPLICATIONS; SILICON CARBIDE; TEMPERATURE; THERMODYNAMIC STABILITY;

BURIED GATES; CIRCUIT OPERATION; CIRCUIT PERFORMANCE; EFFECTS OF TEMPERATURE; HIGH POWER APPLICATIONS; HIGH TEMPERATURE;

SILICON COMPOUNDS;

EID: 0942301413     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/HITEC.1998.676756     Document Type: Conference Paper

References (12)

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