SiC smart power JFET technology for high-tempe rature applications

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 1207-1210

  Sankin, I ^a   Bondarenko, V ^b   Kelley, R ^a   Casady, J B ^a  

^a SemiSouth Laboratories Inc   (United States)

^b MISSISSIPPI STATE UNIVERSITY   (United States)

Author keywords

IC; JFET; Normally off power switch; Smart power

Indexed keywords

ALUMINA; CIRCUIT THEORY; HIGH TEMPERATURE APPLICATIONS; RADIATION EFFECTS; SILICON CARBIDE;

NORMALLY-OFF POWER SWITCH; SMART POWER;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 37849023777     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.1207     Document Type: Conference Paper

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